SOI is better than the planar design since you can fully deplete the channel. But it's worse than FinFETs when you consider the control of the gate on the channel and when it comes to thermals. The oxide below the channel also acts as a thermal isolator. So the heat can't be transported away as efficiently.

The upside of SOI is that it's easier to manufacture. That's why we see so much of it around (AFAIK, GlobalFoundries and TSMC still do it).

But the actual way forward is the FinFET. The 7nm chip from the article is actually built with FinFETs. Otherwise that thing would probably not work very well.